| PART |
Description |
Maker |
| K6R1004C1D K6R1004C1D-JC12 |
256K X 4 STANDARD SRAM, 12 ns, PDSO32
256K x 4 Bit (with /OE) High-Speed CMOS Static RAM Data Sheet
|
Samsung Electronic
|
| AT27LV020A AT27LV020A-12 AT27LV020A-12JC AT27LV020 |
High Speed CMOS Differential 4-Channel Analog Multiplexer/Demultiplexer 16-SOIC -55 to 125 256K X 8 OTPROM, 150 ns, PDSO32
High Speed CMOS Differential 4-Channel Analog Multiplexer/Demultiplexer 16-SO -55 to 125 256K X 8 OTPROM, 150 ns, PDSO32
2 Megabit 256K x 8 Low Voltage OTP EPROM 256K X 8 OTPROM, 120 ns, PQCC32
High Speed CMOS Differential 4-Channel Analog Multiplexer/Demultiplexer 16-TSSOP -55 to 125 256K X 8 OTPROM, 90 ns, PDSO32
2 Megabit 256K x 8 Low Voltage OTP EPROM 256K X 8 OTPROM, 90 ns, PQCC32
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| IDT70V7319S IDT70V7319S133DD |
HIGH-SPEED 3.3V 256K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 高速与3.3V 3.3V56 × 18 SYNCHRONOU开户银行可切换双端口静态RAM.5V的接
HIGH-SPEED 3.3V 256K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 15 ns, PQFP144
|
Integrated Device Technology, Inc.
|
| IDT70V7519S IDT70V7519S166DR IDT70V7519S200BF |
HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 256K X 36 DUAL-PORT SRAM, 12 ns, PQFP208
HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 高速与3.3V 3.3V56K × 36 SYNCHRONOU开户银行可切换双端口静态RAM.5V的接
|
Integrated Device Technology, Inc.
|
| CXK77B1841GB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (256K x 18Bit)(4M位、写延迟LVTTL高速同步静态RAM (256K x 18) 4Mb的后写入LVTTL高速同步SRAM56 × 18位）分位，写延迟LVTTL高速同步静态随机存储器56 × 18位）
|
Sony, Corp.
|
| P3C1041-10TI P3C1041-10TC P3C1041-10JC P3C1041-10J |
HIGH SPEED 256K x 16 (4 MEG) STATIC CMOS RAM 256K X 16 STANDARD SRAM, 10 ns, PDSO44
HIGH SPEED 256K x 16 (4 MEG) STATIC CMOS RAM 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
Pyramid Semiconductor, Corp.
|
| EM614163A-30 EM614163A-40 EM614163TS-30 EM614163TS |
256K x 16 High Speed EDO DRAM
|
Etron Tech
List of Unclassifed Manufacturers
ETRONTECH
|
| MB81C86 |
CMOS 256K-BIT HIGH-SPEED SRAM
|
Fujitsu Media Devices
|
| MB81C84A |
CMOS 256K-BIT HIGH-SPEED SRAM
|
Fujitsu Media Devices
|
| MB81C81A MB81C81A-25 MB81C81A-35 |
CMOS 256K-BIT HIGH-SPEED SRAM
|
Fujitsu Component Limited.
Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
Fujitsu Limited
|
| EDI2041C EDI2040C EDI2042C EDI2043C |
5V ( /-10%),256K x 4 monolithic high speed synchronous static RAM
|
White Electronic Designs
|
| IS61WV25616BLS-25TLI-TR IS61WV25616ALL/ALS IS64WV2 |
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
|
天津新技术产业园区管理委员会
Integrated Silicon Solution, Inc
|
